發表期刊 Publication

 International conference &  journal    International Journal

  • W. Chang, E. Y. Chang, K. S Chen, T. L. Hsieh, and C. W. Tseng, “A gold free fully copper metallized InGaP/GaAs HBT”, EuMW, 2004.
  • H. Chu, E. Y. Chang, H. C. Chang, Y. C. Lien, S. W. Chang, R. C. Huang and H. M. Lee, “Copper Airbridged Low Noise GaAs PHEMT with WNx as the Diffusion Barrier”, in the International Conference on Compound Semiconductor Manufacturing Technology, Miami Beach, Florida, May 3-6, 2004.
  • Edward Y. Chang, Guangli Luo, and Tsung-Hsi Yang, “Growth of High-Quality GaAs Epitaixial Layers on Si Substrate by Using a Novel GeSi Buffer Structure”, in the State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XL), Spring Meeting of the ECS, San Antonio, Texas, May 9-May 14, 2004.
  • Tsung-Hsi Yang, Edward Yi Chang, Shih-Lu Shu, Tsung-Yeh Yang, Hua-Chou Tseng, Guangli Luo, and Chun-Yen Chang, “Thermal stability of nickel germanosilicide on ion-implanted Si8Ge0.2”, in the European Materials Research Society 2004 Spring Meeting, Strasbourg, France, May 24-28, 2004.
  • C. Lien, E. Y. Chang, H. C. Chang, L. H. Chu, S. H. Chen, C. S. Lee and D. Biswas, “A Copper Airbridged Low-Noise GaAs PHEMT with Ti/WNx/Ti Diffusion Barrier for High Frequency Applications” in the Asia-Pacific Microwave Conference, Delhi, December, pp.714. 2004.
  • Edward Yi Chang, Tsung-Hsi Yang, Guangli Luo, Chun-Yen Chang, “Growth of device-quality GaAs epitaxial layers on off-cut Ge/Ge0.95Si0.05/Ge0.9Si0.1/Si substrates with suppressed Ge inter-diffusion”, in the Asian CVD, Taiwan, 2004.
  • Goh, K.-S., Chang, E.Y., Lai, W.-C., “Multimodal concept-dependent active learning for image retrieval” ACM Multimedia 2004 – proceedings of the 12th ACM International Conference on Multimedia, pp. 564-571.,2004
  • Ke, Z.-T., Lee, C.-S., Shen, K.-H., Chang, E.Y. “A study of the fabrication of flip-chip bumps using dry-film photoresist process on 300mm wafer,” 2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW, pp. 75-78, 2004
  • Tsung-Hsi Yang, Guangli Luo, Edward Yi Chang, Y. C. Hsien and Chun-Yen Chang, “Interface-blocking Mechanism for Reduction of Threading Dislocations in SiGe and Ge Epitaxial Layers on Si(100) Substrate”, in the Asian CVD, Taiwan, 2004.
  • H. Chu, E. Y. Chang, S. H. Chen, Y. C. Lien, C.Y. Chang, “InGaP/AlGaAs/InGaAs Enhancement-mode Pseudomorphic HEMT for High Frequency Application”, in the 2004 International Electron Devices and Materials Symposia, Hsinchu, Taiwan, 2004, Dec 20-23.
  • C. Hsieh, E. Y. Chang, S.S. Yeh, G.L. Luo, C. Y. Chang, ”Optimization of the Growth of InGaP etching stop layer by MOCVD for InGaP/GaAs HBT device application”, in the 2004 International Electron Devices and Materials Symposia, Hsinchu, Taiwan, 2004, Dec 20-23.
  • Chia-Ta Chang, Jin-Yu Shiu, Yi-Shan Shoau, Jui-Chien Huang, Yen-Chang Hsieh, Chung-Yu Lu, Edward Yi Chang, “ Multi-energy oxygen ion implantaion isolation for AlGaN/GaN HEMTs”, in the Meeting of the Optical Engineering Society, Tai-Nan, Taiwan, Dec 9-10, 2005.
  • C. Hsieh, E. Y. Chang, G.L. Luo, Dhrubes BISWAS, S.Y. Wang, “Self-assembled In0.22Ga0.78As quantum dots grown on Metamorphic GaAs/Ge/SixGe1-x/Si substrate” in IEEE Nanotech, Nagoya, Japan, July 10-13, 2005.
  • C. Hsieh, E. Y. Chang, G.L. Luo, T. H. Yang, L.H. Chu, Y. C. Lien, C.Y. Lu”A GaAs MESFET Structure Grown on the Ge/SixGe1-x/Si Substrate by MOVPE”, in CS-MAX, Compound Semiconductor Manufacturing Expo, Compound Semiconductor Integrated Circuit Symposium, Palm spring, CA, USA, Oct 30-Nov 2, , 2005.
  • C. Wu, R.B. Hwang, H.T. Hsu, E. Y. Chang, L.H. Hsu, C.H. Huang, and Y.C. Hu, “Design of Flip-Chip Interconnects with vertical coaxial transitions and its fabrication,” in Asia-Pacific Microwave Conference, vol. 2, pp 965-968, 4-7 Dec. 2005.
  • Wei-Cheng Wu, Heng-Tung Hsu, Edward Yi Chang, Cheng-Shih Lee, Chen-Hua Huang, Yin-Chu Hu, Li-Han Hsu, and Yi-Chung Lien, “Flip-Chip Packaged In0.52Al0.48As/InGaAs Metamorphic HEMT Device for Millimeter Wave Application,” CS-MAX, Compound Semiconductor Manufacturing Expo, Compound Semiconductor Integrated Circuit Symposium, Palm spring, CA, USA, pp 94-97, 30 Oct.-2 Nov., 2005.
  • Ke-Shian Chen, Cheng-Shih Lee, Edward Yi Chang, “Non-alloyed Cu metallized ohmic contact to n-type GaAs”, Symposium on Nano Device Technology 2005, Hsinchu, Taiwan.
  • Ke-Shian CHEN, Cheng-Shih LEE, Edward Yi CHANG, Chia-Ching LIN, “Novel Pd/Ge/Cu ohmic contact to n-type GaAs”, ECS 209th Meeting, pp. 494, Denver, Colorado, 2006.
  • C. Lin, Y.C. Hsieh, M. Ueki, H. Yamaguchi, Y.Hirayama, and E. Y. Chang, Growth of AlGaSb/InAs HEMT Structure on Si Substrate for High-Speed Electronic Application, The 14th International Conference on Molecular Beam Epitaxy, 3-8 September 2006.
  • Y.Chang, “High-performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic HEMT for Ka-band Applications”, IEEE International Conference on Semiconductor Electronics(ICSE), Prince Hotel & Residence, Kuala Lumpur, Malaysia, November 29-December 1, 2006.
  • H. Chu, H. T. Hsu, E. Y. Chang, T. L. Lee, S. H. Chen, Y. C. Lien, C.Y. Chang, “High Linearity and High Efficiency Enhancement-mode Low Noise PHEMT with Single voltage Supply for W-CDMA Application”, in the International Electron Devices and Materials Symposia, Tainan, Taiwan, R.O.C., Dec 7-8, 2006.
  • Li-Han Hsu, Wei-Cheng Wu, Edward Yi Chang, Senior Member, IEEE, Yin-Chu Hu, Chin-Te Wang, and Guo-Wei Huang,”Chip-Scale Packaged 30 GHz GaAs Microstrip and Coplanar Waveguide MMIC
Amplifiers Using Flip Chip Interconnects
” MMS 2007 Mediterranean Microwave Symposium, May 10~20, 2007.
  • Wei-Cheng Wu, Li-Han Hsu, Edward Yi Chang, Senior Member, IEEE, Yin-Chu Hu1,
Yun-Chi Wu, and Yu-Min Teng , “DC and RF Characterizations of Flip-Chip Packaged Low-Noise GaAs PHEMT
towards Multi-chip Modules (MCMs) for Microwave Applications”, MMS 2007 Mediterranean Microwave Symposium Hungary Budapest, May 14~ 2007.
  • Chia-Yuan Chang, Edward Yi Chang, Yi-Chung Lien, Yasuyuki Miyamoto, Chien-I Kuo, Sze-Hung Cheng and Li-Hsin Chu, “High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic HEMT for Ka-Band Applications,” IEEE International Conference on Semiconductor Electronics , 2006.
  • Kung-Liang Lin, Edward-Yi Chang, Yo-Lin Hsiao, Wei-Ching Huang,Tingkai Li, Doug Tweet, Sheng Teng Hsu, Jer-shen Maa”MOVPE high quality GaN films grown on Si (111) using AlN multi-buffer layer”, 7th International Conference on Nitride Semiconductors ,Les Vegas ,September 16-21, 2007.
  • Yun Chi Wu, Edward-Yi Chang, Y.C. Lin, and W.C. Wu, “High-temperature electrical characteristics of SPDT GaAs switches with copper metallized interconnects”, CS MANTECH conference, , Austin, Texas, USA ,May 14-17, 2007.
  • Y. Chang, H. Yamaguchi, Y. C. Lin, “Growth of InAs channel HEMT on Si substrate and it’s possible application for low power logic”, Solid State Device Meeting (SSDM), Tokyo, Sept. 2007. (Invited)
  • Y. Chang, Chien Yi Kuo, “HEMT for high speed electronic applications From InGaAs to InAs channel devices”, ISCS, Tokyo, Japan, 2007. (Invited)
  • Kung-Liang Lin, Edward-Yi Chang, Jui-Chien Huang, Yo-Lin Hsiao, Tingkai Li, Doug Tweet, Sheng Teng Hsu,          Jer-shen Maa “MOVPE high quality GaN film grown on Si (111) Substrates using an Multilayer AlN buffer”, in the 7th Int’l Conference of Nitride Semiconductors (ICNS-7) Conference, Les Vegas, Nevada, Unite State ,September 16-21 ,2007.
  • E. Y. Chang, “III-V Based Semiconductor Devices for Milimeter Wave Applications”, 7th Topic Workshop on Heterostructure Microelectronics (TWHM 2007), Kisarazu, Chiba, Japan, Aug.21-24, 2007.(Invited)
  • Chien-I Kuo, Heng-Tung Hsu, Chia-Yuan Chang, Edward Yi Chang, and Heng-Shou Hsu, “Evaluation of RF and Logic Performance for 80 nm InAs/InGaAs Composite Channel HEMTs Using Gate Sinking Technology”,  in the 2007 IEEE Electron device and solid state circuit(EDSSC), Tainan, Taiwan, Dec. 20-22, 2007.
  • Heng-Tung Hsu, Chia-Yuan Chang2, Edward Yi Chang, Chien-I Kuo, and Yasuyuki Miyamoto, “High Performance InAs-Channel HEMT for Low Voltage Milimeter Wave Applications”, 2007 Asia-Pacific Microwave Conference, Bangkok, Thailand, Dec. 11-14, 2007.
  •  E. Y. Chang, “III-V Based Semiconductor Devices for Milimeter Wave Applications”, 7th Topic Workshop on Heterostructure Microelectronics (TWHM 2007), Kisarazu, Chiba, Japan, Aug.21-24, 2007. (Invited)
  • E. Y. Chang, “Growth of InAs Channel HEMT Structure on Si substrate and it’s Possible Application on Low Power Logic”, 2007 International Conference on Solid State Devices and Materials (SSDM 2007), Ibaraki, Japan, Sep.18-21, 2007. (Invited)
  • E. Y. Chang, “HEMT for high speed electronic applications: from InGaAs to InAs channel devices”, The 34th International Symposium on Compound Semiconductors (ISCS 2007), Kyoto, Japan, Oct.15-18, 2007. (Invited)
  • I. Kuo , H. T. Hsu, E. Y. Chang , C. T. Chang, C. Y. Chang and Y. Miyamoto, “Investigation of Impact Ionization from InxGa1-xAs to InAs Channel HEMTs for High Speed and Low Power Applications”, Indium Phosphide and Related Materials Conference, Versailles, France, May 25-29, 2008
  • Chien-I Kuo, Heng-Tung Hsu, Edward Yi Chang, Chia-Ta Chang, Chia-Yuan Chang and Yasuyuki Miyamoto, “Investigation of Impact Ionization from InxGa1-xAs to InAs Channel HEMTs for High Speed and Low Power Applications,” in 20th IPRM WP 62 2008.
  • Edward Yi Chang , Chien-I Kuo, Heng-Tung Hsu, and Chia-Yuan Chang, “InAs/In1-xGaxAs Composite Channel High Electron Mobility Transistors for High Speed Applications,” in EuMW IC
  • Edward Yi Chang, Chien-I Kuo, Hung-Tung Hsu, “InAs Quantum Well Transistors for High-Speed Low Power Applications”, 213th ECS Meeting May 18-23, 2008
  • Edward Yi Chang, Yueh Chin Lin, Yu Lin Hsiao, Y. C. Hsieh, Guang Li Luo, Chia Yuan Chang and Chien I Kuo, “An AlGaAs/InGaAs HEMT Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers,”in MRS meeting, March24-28, 2008
  • KungLiang Lin, Edward-Yi Chang and Tingkai Li, “Effect of Graded AlGaN Interlayer Buffer on the Strain of GaN Grown on Si(111) Using MOCVD Method, ” in the meeting of MRS 2008 Spring Meeting, San Fancisco, C.A,Unite State, March 24-28, 2008.
  • Yuen-Yee Wong, Tsung-His Yang, Jet-Rung Chang, Yi-Chen Chen, Jui-Tai Ku, and Edward Yi Chang, “Dependence of GaN Defect Structure on the Parameters of the AlN Buffer Layer Grown by Plasma-assisted Molecular Beam Epitaxy,” in the meeting of MRS 2008 Spring Meeting, San Fancisco, C.A,Unite State, March 24-28, 2008.
  • Kung-Liang Lin, Edward-Yi Chang,Yo-Lin Hsiao, Wei-Ching Huang, Chen-Hao Chiang, Tingkai Li, Doug Tweet, “Growth high quality GaN films on large size Si(111) using AlN with graded AlxGa1-xN multi-buffer layer by MOCVD” Annual Meeting of the Physical Society of Republic of China, Hsinchu, Taiwan , January 28-30,2008
  • Kung-Liang Lin, Edward-Yi Chang, Wei-Ching Huang, Yo-Lin Hsiao,Tien-Tung Luong  Chen-Hao Chiang,”Reduction threading dislocation of Crack-free GaN film overgrowth on patterned Si (111) templates substrates” in the meeting of International Symposium on Nitride Semiconductors (IWN2008), Montreux, Switzerland, October 6-10, 2008
  • H. Chiang, F. K. Hsiao, H. H. Huang, K. M. Chen, T. L. Chu, P. L. Wu, C. H. Cheng,K. L. Lin, Y. L. Hsiao, W. C. Huang, E.Y. Chang, J. F. Chen and W. I Lee,” Nonpolar a-plane GaN grown on r-plane sapphire by metalorganic chemical vapor deposition and hydride vapor phase epitaxy with sandwiched AlN buffer structure ” in the meeting of International Symposium on Nitride Semiconductors (IWN2008), Montreux, Switzerland, October 6-10, 2008
  • Yo-Lin Hsiao, Edward-Yi Chang, Kung-Liang Lin,Wei-Ching Huang, Chen-Hao Chiang,Student “Improvement of the Quality of GaN Film Quality Grown on Si(111) Substrate Using Multi-AlN Buffer” Conference on 1st Global COE Student Conference on Innovative Electronic Topics (SCIENT2008) Japan, July 31-August 1, Icho Kaikan, Osaka University, Suita, Osaka, Japan 
  • Edward Yi Chang, Shih-Hauan Tang, Yueh-Chin Lin and Yen-Chang Hsieh, “III-V/Si Intergration for Future Low Power Logic Application”Conference on 1st Global COE Student Conference on Innovative Electronic Topics (SCIENT2008) Japan, July 31-August 1, Icho Kaikan, Osaka University, Suita, Osaka, Japan 
  • Y. Chang, Y. C. Lin, W. C. Wu, J. C. Huang and C. T. Chang, “Study of the Inversion Behaviors of Al2O3/InAs Metal Oxide Semiconductor Capacitors”Conference of IUMRS-ICA, Dec. 11-12, 2008, Nagoya, Japan
  • Edward Yi Chang, Chia-Ta Chang, Shih-Kuang Hsiao, Jui-Chien Huang, and Chung-Yu Lu, “The Effect of the Mechanical Stress on GaN-based HFET Characteristics” Conference on Photonics West 2009, Jan 24-29, San-Francisco, USA.
  • Kartika Chandra Sahoo, Yiming Li, Men-Ku Lin, Edward Yi Chang, and Jin-Hua Huang, “Design and Fabrication of Sub-Wavelength Structure on Silicon Nitride for Solar Cells,” 9th International Conference on Nanotechnology, IEEE Nano 2009, Geneoa, Italy, July 26-30, 2009.
  • Kartika Chandra Sahoo, Men-Ku Lin, Edward Yi Chang, Yiming Li, and Jin-Hua Huang, “Reflectance of Sub-Wavelength Structure on Silicon Nitride for Solar Cell Application,” International conference on the SISPAD-2009, San Diego, California, Sep. 9-11, 2009.
  • Kartika Chandra Sahoo, Men-Ku Lin, Edward Yi Chang, and Jin-Hua Huang,.”Study of Reflectance Properties of Sub-wavelength Structures on Silicon nitride for Solar cell application,” 34th PVSC, Philadelphia, USA, June 7-12, 2009.
  • Hai-Dang Trinh, Edward Yi Chang, Yuen-Yee Wong, Binh-Tinh Tran, Chih-Chieh Yu, Chi-Chung Kei, Wen-Hao Cho, “Impact of surface treatment and self-cleaning effects on atomic layer deposition (ALD) of Al2O3 on InAs,” 9th Conference on Atomic Layer Deposition, Monterey, California, USA, July 19-22, 2009.
  • Kung-Liang Lin, Tien-Tung Luong ,Yo-Lin Hsiao, Wei-Ching Huang, Edward-Yi Chang, Chen-Hao Chiang, J. F. Chen, W. I Lee and Gavin Liu, “Properties of GaN film overgrowth on patterned Si (111) templates substrates,” Physical Society of Republic of China, Changhua, Taiwan, Jan. 19-21, 2009.
  • H. Chiang, K. M. Chen, Y. H. Wu, Y. H. Yeh, W. I Lee, J. F. Chen ,K. L. Lin, Y. L. Hsiao, W. C. Huang and E. Y. Chang, “Nonpolar a-plane GaN grown on r-plane sapphire by metalorganic chemical vapor deposition with sandwiched AlN buffer structure,”Physical Society of Republic of China, Changhua, Taiwan, Jan. 19-21, 2009.
  • L. Hsiao, K. L. Lin, W. C. Huang, L.T. Tung, T.B. Tinh , E. Y. Chang, C. H. Chiang, W. I. Lee, J. F. Chen, Gavin Liu, “Improvement of the GaN film quality grown on 4 inch Si (111) substrates using multi-AlN buffer layers,” Physical Society of Republic of China, Changhua, Taiwan, Jan. 19-21, 2009.
  • H. Chiang, K. M. Chen, T. L. Chu, K. L. Lin, Y. L. Hsiao, W. C. Huang, E.Y. Chang, J. F. Chen and W. I Lee, “Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition and hydride vapor phase epitaxy,” The 17th American Conference on Crystal Growth and Epitaxy (ACCGE-17), Wisconsin, USA, August 9-14, 2009.
  • Chien I Kuo, Heng Tung Hsu, Edward Yi Chang, Chien Ying Wu, Yasuyuki Miyamoto, and Wen-Chung Tsern, “A Novel Metamorphic High Electron Mobility Transistors with (InxGa1-xAs)m/(InAs)n Superlattice Channel Layer for Millimeter-Wave Applications,” Asia-Pacific Microwave Conference, WE3P-25, Singapore, Dec. 7-12, 2009.
  • Edward Yi Chang, “III-V Semiconductor Devices for Future Energy-Efficient and Beyond-CMOS Applications,” SEMATECH III-V Workshop, Marritt Baltimore, USA, Dec 6, 2009.
  • Funamizu, Y. C. Lin, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, E. Y. Chang, T. Hattori, H. Iwai, “Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure,” ECS Transaction, 216th ECS Meeting, Vienna, Austria, Oct. 4-9, 2009.
  • Kung-Liang Lin ,Tien-Tung Luong, Chen-Hao Chiang,Yuen-Yee Wong, Yu-Lin Hsiao,Wei-Ching Huang, Jung-Chi Lu,Binh-Tinh Tran,Chen-Chen Chung and Edward-Yi Chang, “Electrical and Optical Characterization of GaN film grown on patterned Si (111) substrates,” Annual Meeting of the Physical Society of Republic of China, Tainan, Taiwan , Feb. 2-4, 2010.
  • Chen-Hao Chiang, Kung-Liang Lin, Kuei-Ming Chen, Yen-Hsien Yeh, Yin-Hao Wu, Yu-Lin Hsiao, Wei-Ching Huang, Edward-Yi Chang, Wei-I Lee, Jenn-Fang Chen, “Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition and hydride vapor phase epitaxy,” Annual Meeting of the Physical Society of Republic of China, Tainan, Taiwan , Feb. 2-4, 2010.
  • Hai-Dang Trinh, Edward Yi Chang, Yuen-Yee Wong, Chia-Yuan Chang, Chih-Chieh Yu, Kung-Liang Lin, “Electrical Characteristics of Atomic Layer Deposition Al2O3 on n-InAs with various Surface Treatments,” Annual Meeting of the Physical Society of Republic of China, Tainan, Taiwan , Feb. 2-4, 2010.
  • Li-Han Hsu, Dan Kuylenstierna, Herbert Zirath, Edward Yi Chang, and Chin-Te Wang, “Flip-Chip Assembled Ultra-Low Phase-Noise 7 GHz InGaP HBT Oscillator,” CS MANTECH Conference, Portland, Oregon, USA, May 17-20, 2010.
  • Chin-Te Wang, Heng-Tung Hsu, Chien-I Kuo, Li-Han Hsu, Yasuyuki Miyamoto, Edward Yi Chang, Wee-Chin Lim, Yu-Sheng Chiu,” An 80 nm In7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band LNA Applications, ” 22th IPRM, Kagawa, Japan, May 31-June 4, 2010.
  • Faiz Aizad, Heng-Tung Hsu, Chien-I Kuo, Chien-Ying Wu, Edward Yi Chang, Yasuyuki Miyamoto, Guo-Wei Huang, Yu-Lin Chen, and Yu-Sheng Chiu, “Investigation Logic Performances of 80-nm HEMTs for InxGa1-xAs,” in 37th International Symposium on Compound Semiconductors (ISCS), Takamatsu Symbol Tower, Kagawa, Japan, May 31 – June 4, 2010.
  • Chen-Chen Chung, Hung-Wei Yu, Li-Han Hsu, Chien-I Kuo, Nguyen-Hong Quan, Yu-Sheng Chiu and Edward Yi Chang, “The Effect of the Pattern of Circle-grid Electrode on Concentrated GaAs Solar Cells Efficiency,” 218th ECS Meeting, Las Vegas, Nevada, USA, Oct. 10-15, 2010.
  • Wee Chin Lim, Chin-Te Wang, Chien-I Kuo, Li-Han Hsu, Szu-Ping Tsai, and Edward Yi Chang,” Flip-Chip Packaging of In0.6Ga0.4As MHEMT Device on Low-Cost OrganicSubstrate for W-Band Applications,” 218th ECS Meeting, Las Vegas, Nevada, USA, Volume 33, Issue 13, Oct. 10-15, 2010.
  • Ching-Chiun Wang, Pang-Shiu Chen, Chih-Yung Huang and Edward Yi Chang, “Tailoring structure, optical properties and electrical characteristics of ZnO:Al films prepared by atomic layer deposition,” APIC, Singapore, Oct. 18, 2010.
  • Faiz Aizad, Heng-Tung Hsu, Chien-I Kuo, Li-Han Hsu, Chien-Ying Wu, Edward Yi Chang, Guo-Wei Huang and Szu-ping Tsai, “Logic Performance of 40 nm InAs/InxGa1-xAs Composite Channel HEMTs,” 2010 International Conference on Enabling Science and Nanotechnology, KLCC, Malaysia, Dec. 1-3, 2010.
  • Wee Chin Lim, Chien-I Kuo, Heng-Tung Hsu, Chin-Te Wang, Li-Han Hsu, Faiz Aizad, Guo-Wei Hung, Yasuyuki Miyamoto and Edward Yi Chang, “Bonding Temperature Effect on the Performance of Flip Chip Assembled 150nm mHEMT Device on Organic Substrate,” Nanotech Malaysia 2010: International Conference on Enabling Science and Nanotechnology, KLCC, Malaysia, Dec. 8-10, 2010.
  • D. Trinh, E.Y. Chang*, C. I. Kuo, H. Q. Nguyen, K. L. Lin, Y. Y. Wong, C. C. Chung, Y. C. Lin, C. H. Chang, Y. S. Chiu, B. T. Tran, and C. L. Nguyen, “Atomic Layer Deposition of Al2O3/n-InxGa1-xAs structures with different In content (x = 0.53-1),” the 38th International Symposium on Compound Semiconductors (ISCS 2011), Berlin, Germany, May 22-26, 2011.
  • Q. Nguyen, E.Y. Chang, H.D. Trinh, H.W. Yu, Y.Y. Wong, H.H. Vu, T.B. Tran, K.L. Lin, C.C. Chung, C.H. Hsu, W.C. Wang and C.L Nguyen, “High quality 1eV InGaAs on GaAs substrate for inverted metamorphic solar cell by MOCVD,” the 38th International Symposium on Compound Semiconductors (ISCS 2011), Berlin, Germany, May 22-26, 2011.
  • D. Trinh, E. Y. Chang, G. Brammertz, C. Y. Lu, H. Q. Nguyen, B. T. Tran, “Experimental and modeling on atomic layer deposition Al2O3/n-InAs metal-oxide-semiconductor capacitor with various surface treatments,” the China Semiconductor Technology International Conference 2011 (CSTIC 2011), Shanghai, China, March 15-17, 2011, (Online:ECS Transactions, vol. 34, pp. 1041-1046, (2011) (invited)
  • Hai-Dang Trinh, Edward Yi Chang, Chih-Chieh Yu, Yuen-Yee Wong, Hong-Quan Nguyen, Kung-Liang Lin, Yueh-Chin Lin, Chien-I Kuo, Binh-Tinh Tran, Chi-Lang Nguyen, Yu-Sheng Chiu, Chen-Chen Chung, “Characterization of electrical properties of atomic layer deposition Al2O3on n-In53Ga0.47As using conductance method and simulation,” 2011 Annual Meeting of the Physical Society of ROC, Tainan, Taiwan, Jan 25, 2011
  • Hong-Quan  Nguyen, Edward -Yi Chang*, Hung-Wei Yu, Yuen-Yee Wong, Hai-Dang Trinh, Binh -Tinh  Tran, Kung-Liang Lin, Chen-Chen Chung, Wei-Chieh Wang, Chi-Lang Nguyen, “The Growth and Investigation of In3Ga0.7As on GaAs by MOCVD,” 2011 Annual Meeting of the Physical Society of ROC, Taipei, Taiwan, Jan 25, 2011
  • Binh-Tinh Tran, Edward-Yi Chang, Kung-Liang Lin, Hong-Quan Nguyen and Hai-Dang Trinh, “The Growth and Investigation of In3Ga0.7As on GaAs by MOCVD,” 2011 Annual Meeting of the Physical Society of ROC, Taipei, Taiwan, Jan 25, 2011
  • Chia-Hua Chang, Huan-Chung Wang, Tin-En Shie, Yueh-Chin Lin, Guan-Ning Huang, and Edward Yi Chang, “Fluorine Treated E-Mode AlGaN/GaN HEMT on Si Substrate for RF Application,” International Workshop on the “ Future of Nano Electronics-Researches and Challenges ahead”, India, 2011.
  • Yu-Lin Hsiao, Lung-Chi Lu, Yue-Han Wu, Chia-Ao Chang, Yu-Gong Chen2, Jer-Shen Maa, Heng-Tung Hsu and Edward Yi Chang,” Dislocation Reduction by Double AlGaN Buffer Layers in GaN on Si Substrate,” 9th Topical Workshop on Heterostructure Microelectronics, Japan, 2011.
  • Shih Hsuan Tang, Chien I Kuo, Hai Dang Trinh, Edward Yi Chang, Ching Yi Hsu,Yung Hsuan Su, Shih Pang Chang, “Investigation of Electronic Characteristics of Ge Epitaxial Film on GaAs Substrate with ALD Al2O3, “ SSDM, Japan, 2011.
  • Yuen-Yee Wong, Yu-Sheng Chiu, Tien-Tung Luong, Tai-Ming Lin, Yen-Teng Ho, Yue-Chin Lin, Edward Yi Chang, “Growth and fabrication of AlGaN/GaN HEMT on SiC substrate”, 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE), Kuala Lumpur, Malaysia, Sept. 19-21,
  • Yu-Sheng Chiu, Jui-Chien Huang, Tai-Ming Lin, Yu-Ting Chou, Chung-Yu Lu, Chia-Ta Chang, Edward Yi Chang, “RF characteristics of AlGaN/GaN HEMTs under different temperatures”, 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE), Kuala Lumpur, Malaysia, Sept. 19-21,
  • Wei-Ching Huang, Yuen-Yee Wong, Kusan-Shin Liu, Chi-Feng Hsieh, Edward Yi Chang, “The parasitic reaction during the MOCVD growth of AlInN material”, 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE), Kuala Lumpur, Malaysia, Sept. 19-21, 2012.
  • Hong Quan Nguyen, Hai Dang Trinh, Hung Wei Yu, Ching Hsiang Hsu, Chen Chen Chung, Binh Tinh Tran, Yuen Yee Wong, Thanh Hoa Phan Van, Quang Ho Luc, Diao Yuan Chiou, Chi Lang Nguyen, Chang Fu Dee, Edward Yi Chang, “The growth and fabrication of high-performance In0.5Ga0.5As metal-oxide-semiconductor capacitor on GaAs substrate by metalorganic chemical vapor deposition method”, 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE), Kuala Lumpur, Malaysia, Sept. 19-21, 2012.
  • Hai-Dang Trinh, Yue-Chin Lin, Edward Yi Chang, Hong-Quan Nguyen, Shin-Yuan Wang, Yuen-Yee Wong, Binh-Tinh Tran, Quang-Ho Luc, Chi-Lang Nguyen, Chang-Fu Dee, “Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs”, 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE), Kuala Lumpur, Malaysia, Sept. 19-21, 2012.
  • Edward Yi Chang, “InAs HEMT for terahertz applications”, 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE), Kuala Lumpur, Malaysia, Sept. 19-21, 2012.
  • Ting-En Hsieh, Lu-Che Huang, Yueh-Chin Lin, Chia-Hua Chang, Huan-Chung Wang, Edward Yi Chang, “Fabrication of AlGaN/GaN HEMTs with slant field plates by using deep-UV lithography”, 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE), Kuala Lumpur, Malaysia, Sept. 19-21, 2012.
  • Che-Yang Chiang, Heng-Tung Hsu, Chien-I Kuo, Ching-Te Wang, Wee Chin Lim, Edward Yi Chang, “Impact of bonding temperature on the performance of In0.6Ga0.4As Metamorphic High Electron Mobility Transistor (mHEMT) device packaged using Flip-Chip-on-Board (FCOB) technology”, 2012 Asia Pacific Microwave Conference Proceedings, Kaohsiung, Taiwan, Dec. 4-7 2012.
  • Chia-Hua Chang, Heng-Tung Hsu, Lu-Che Huang, Che-Yang Chiang, Edward Yi Chang, “Fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate with slant field plates using deep-UV lithography featuring 5W/mm power density at X-band”, 2012 Asia Pacific Microwave Conference Proceedings, Kaohsiung, Taiwan, Dec. 4-7 2012.
  • Wei-Ching Huang, Kusan-Shin Liu, Yuen-Yee Wong, Chi-Feng Hsieh, Edward-Yi Chang, “Effect of Growth Parameter on InAlN Films Grown By MOCVD For HEMT Application”, 223rd The Electrochemical Society (ECS), USA, 2013
  • Wei-Ching Huang, Kusan-Shin Liu, Yuen-Yee Wong, Chi-Feng Hsieh, Edward-Yi Chang, “Effect of Growth Parameter on InAlN Films Grown By MOCVD For HEMT Application”, 223nd The Electrochemical Society (ECS), May 12-16, 2013 Toronto, Canada, 2013
  • Ching-Hsiang Hsu, Hsun-Jui Chang, and Edward Yi Chang, ”Cu Metallization of III-V Solar Cell Using n-GaAs/Pd/Ge/Cu Ohmic Contact system”, 223nd The Electrochemical Society (ECS), May 12-16, 2013 Toronto, Canada, 2013
  • C. Liu, H. C. Wang, and E. Y. Chang, ” Low Leakage Current GaN MIS-HEMTs with SiNx Passivation and Gate Insulator using In Situ N2 Plasma Treatment”, 223nd The Electrochemical Society (ECS), May 12-16, 2013 Toronto, Canada, 2013
  • Yu-Lin Hsiao, Chia-Ao Chang, Yi-Jie Wang, You-Chen Weng, Ping-Yu Tsai,Yen-Yu Chen , Edward Yi Chang, ”Epitaxial growth and device characteristics of algan/gan/algan double heterostructure field effect transistors on si substrates” 37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), Wamemunde, Germany, May 26-29 2013
  • Ching-Hsiang Hsu, Hsun-Jui Chang, Hung-Wei Yu, Hong Quan Nguyen and Edward Yi Chang, ”Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge multi-junction solar cell”, International Conference on Solid State Devices and Materials (SSDM), Fukuoka, Japan, Sept. 24-27, 2013.
  • Quang-Ho Luc, Edward Yi Chang, Hai-Dang Trinh, Hong-Quan Nguyen, Binh-Tinh Tran, Yueh-Chin Lin and Huy-Binh Do, “On the electrical characteristics of the atomic layer deposition Al2O3/In0.53Ga0.47As MOSCAPs with various annealing processes,” International Conference on Solid State Devices and Materials (SSDM), Fukuoka, Japan, Sept. 24-27, 2013.
  • W. Yu, Y. Yamamoto, B.Tillack,H. Q.Nguyen, and E. Y.Chang, “Growth of InGaAs single-junction solar cell on GaAs/Ge/Si heterostructure using graded-temperature arsenic technique,” International Conference on Solid State Devices and Materials (SSDM), Fukuoka, Japan, Sept. 24-27, 2013.
  • Niraj Man Shrestha, T.-T.Luong ,Yiming Li,, and Y. Chang, “Analysis of Transport Characteristics of AlGaN/GaN HEMTs with AlN Spacer Layer ” International Conference on Solid State Devices and Materials (SSDM), Fukuoka, Japan, Sept. 24-27, 2013.
  • Shrestha Niraj Man, Wang Yuen Yee, Huang Wei-Ching, Chi-Feng Hsieh, Edward-Yi Chang, “Effects of AlN Spacer Layer Thickness in Carrier Transport of AlGaN/GaN HEMT”, Hualien, Taiwan, 物理年會, Jan. 29-31, 2013
  • Kuan Shin Liu, Yuen-Yee Wong, Chi-Feng Hsieh, Wei-Ching Huang and Edward-Yi Chang,“Improvement of the Electrical Properties in InAlN/AlN/GaN Heterostructures for HEMT Application”, Hualien, Taiwan, 物理年會, Jan. 29-31, 2013
  • Chi-Feng Hsieh ,　Yuen-Yee Wong ,　Wei-Ching Huang ,　Kuan-Shin Liu ,　Niraj-Man Shrestha,　Edward-Yi Chang,“I Effects of Buffer Structures on GaN Film Resistivity Grown by Metal Organic Chemical Vapor Deposition on Sapphire Substrate”, Hualien, Taiwan, 物理年會, Jan. 29-31, 2013
  • C. Weng a, P. Y. Tsai b, Y. Y. Chen c, Y. J. Wang a, Y. L. Hsiao c, E. Y. Chang, “ Study About Mo Sputter on Backside Si(111) to Control Curvature Change”, Hualien, Taiwan, 物理年會, Jan. 29-31, 2013
  • J. Wang , Y. C. Weng , P. Y. Tsai , C. A. Chang, Y. Y. Chan , Y. L. Hsiao , E. Y. Chang,“Effects of LT-AlGaN Interlayers on Properties of Thick GaN Growth on Si”, Hualien, Taiwan, 物理年會, Jan. 29-31, 2013
  • Yu-Sheng CHIU , Yu-Ting CHOU , Yuen-Yee HUANG , Tai-Ming LIN , Po-Feng Li , Edward Yi Chang,“Development Of AlGaN/GaN Schottky Barrier Diode (SBD) For High Breakdown”, Hualien, Taiwan, 物理年會, Jan. 29-31, 2013
  • Chen-Chen Chung, Kung- Liang Lin, Shih-Wei Chen, Binh-Tinh Tran ,Yen-teng Ho ,Chien-Chih Chen and Edward Yi Chang, “InGaP/GaAs/Ge triple-junction solar cells with ZnO nanotube” Nantao,Taiwan International Electron Devices and Materials Symposium(IEDMS) NOV 28-29, 2013
  • Niraj Man Shrestha, Yueh-Chin Lin, Han-Tung Chang, Yiming Li, Edward Yi Chang, “Device Simulation of Regrown P-InAlN Gate AlGaN/GaN High Electron Mobility Transistor” 17th International Workshop on Computational Electronics(IWCE), Paris, France, June 3-6, 2014
  • Yuen-Yee Wong, Edward Yi Chang, Yu-Kong Chen, Shih Chien Liu, Yueh-Chin Lin and Jer-Shen Maa, “Ti/Al/Ni/Cu Ohmic Contact with Low Contact Resistance and Smooth Surface Morphology for AlGaN/GaN HEMT”, 225th The Electrochemical Society(ECS) Meeting, Orlando, USA, May 11-15 2014(invited)
  • Shih Chien Liu, Yuen-Yee Wong, Yueh-Chin Lin and Edward Yi Chang, “Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer”, 225th The Electrochemical Society(ECS) Meeting, Orlando, USA, May 11-15 2014
  • N. Yao, Y. C. Lin, Y. L. Chuang, Y. X. Huang, W. C. Shih, S. M. Sze, and E. Y. Chang, “An Au-free GaN High Electron Mobility Transistor with Ti/Al/W Ohmic Metal Structure,” 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2015), Hsinchu, Taiwan, Jun 29- July 2, 2015.
  • SC Liu, GM Dai, and EY Chang, “Improved reliability of GaN HEMTs using N2 plasma surface treatment,” 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2015), Hsinchu, Taiwan, Jun 29- July 2, 2015.
  • Y. Chen, K. M. Chen, G. W. Huang and E. Y. Chang, “RF Characteristics of LDMOS Transistors with Superjunction Structures,” International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan, Sept. 27-30, 2015.
  • C. Yang, J. N. Yao, H. H. Hsu, Y. C. Lin, H. T. Hsu, J. S. Maa, E. Y. Chang, and H. Iwai, “Evaluation of InAs HEMT with Non-alloyed Ohmic contacts & Mesa Sidewall Etch for RF and Low-power Logic Applications,” Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan, Sep. 2015.
  • T. Ho, E. Y. Chang et al., “Few Layer MoS2 Grown by Pulsed Laser Epitaxy,” China Semiconductor Technology International Conference, Shanghai, China, Mar. 15-16, 2015.
  • T. Ho, T. C. Yen, T. T. Luong, L. L. Wei, Y. C. Chu, C.A. Jong, H. R. Hsu, M. W. Lin, H.Y. Chen, Y. Y. Tu, T. Chang and E. Yi Chang, “Large area of few layer MoS2 growth by pulsed laser deposition,” TACT 2015 International Thin Films Conference, Tainan, Taiwan Nov. 15-18, 2015.
  • H. Wu, P. C. Han, and E. Y. Chang, ”Large Gate Swing and High Threshold Voltage Enhancement-mode AlGaN/GaN HEMTs Using Low Energy Fluorine Ion Implantation in GaN Layer” The Electrochemical Society(ECS), Chicago, USA, May 2015
  • Yen-Teng Ho, Tzu-Chun Yen, Tien-Tung Luong, Lin-Lung Wei, Tzu-Chun Yen, Yung-Ching Chu and Edward Yi Chang, “Post sulfurization effect on the MoS2 Grown by Pulsed Laser Deposition”, China Semiconductor Technology International Conference (CSTIC), Shanghai, China, Mar. 13-14, 2016.
  • Quang-Ho Luc, Po-Chun Chang, Huy-Binh Do, Yueh-Chin Lin, and Edward Yi Chang, “Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0. 53Ga0. 47As MOSCAP and MOSFET structures”, China Semiconductor Technology International Conference (CSTIC), Shanghai, China, Mar. 13-14, 2016.
  • Yen-Teng Ho, Yung-Ching Chu, Chao An Jong, Hung-Yi Chen, Meng-Wei Lin, Ming Zhang, Po-Yen Chien, Yung-Yi Tu, Jason Woo, Edward Yi Chang, “Contact resistance reduction on layered MoS2 by Ar plasma pre-treatment”, 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, June. 12-13 2016.
  • YC Lin, TW Lin, CH Wu, JN Yao, HT Hsu, WC Shih, K Kakushima, K Tsutsui, H Iwai, and EY Chang, “Optimization of gate insulator material for GaN MIS-HEMT”, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, Czech Republic, June. 12-16 2016.
  • Yung-Ching Chu, Chao-An Jong, Yen-Teng Ho, Ming Zhang, Po-Yen Chien, Hung-Ru Hsu, Hung-Yi Chen, Yung-Yi Tu, Krishna P Pande, Jason CS Woo, Edward Yi Chang, “Synthesis of wafer-scale WSe2by WOxselenization on SiO2/ Si substrates”, 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, June. 12-13 2016.
  • Heng-Tung Hsu, Yueh-Chin Lin, Lu-Che Huang, Chia-Hua Chang, Ting-En Hsieh, Yasushi Itoh, Edward Yi Chang, “The effect of surface passivation on the electrical performance of Al-GaN/GaN HEMTs with slant field plates”, 2016 Compound Semiconductor Week (CSW), Toyama, Japan, Jun. 26-30 2016.
  • YC Lin, JC Lin, Y Lin, CH Wu, PC Chin, HT Hsu, TE Hsieh, H Iwai, EY Chang, “Evaluation of GaN HEMT with field plate for reliability improvement”, 2016 Compound Semiconductor Week (CSW), Toyama, Japan, Jun. 26-30 2016.
  • YC Lin, JC Lin, Y Lin, CH Wu, YX Huang, SC Liu, HT Hsu, TE Hsieh, K Kakushima, H Iwai, EY Chang, “Enhancement-mode GaN MIS-HEMTs with HfLaOx gate insulator”, 2016 Compound Semiconductor Week (CSW), Toyama, Japan, Jun. 26-30 2016.
  • Yen-Ku Lin, Shuichi Noda, Ruey-Bor Lee, Chia-Ching Huang, Quang Ho Luc, Seiji Samukawa, Edward Yi Chang, “Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess”, 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), Sendai, Japan, Aug. 22-25 2016.
  • H. Huynh, Q. Ho Luc, M. T. H. Ha, H. B. Do, H. W. Yu, and E. Y. Chang,” The properties of the InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition using the interfacial misfit dislocation technique,” Solid State Devices and Materials Conference (SSDM), Japan, September, 2016.
  • H. Huynh, M. T. H. Ha, Q. H. Luc, H. B. Do, C. J. Hsiao, C. C. Chang, J. W. Lin, H. W. Yu, and E. Y. Chang,” The growth of InxGa1-xSb epilayer on GaAs substrate by metalorganic chemical vapor deposition using an interfacial misfit dislocation GaSb buffer layer,” Solid State Devices and Materials Conference (SSDM), Japan, September, 2016.
  • H. Wu, P. C. Han, Q. H. Luc, S. C. Liu, Y. K. Lin, R. B. Lee, C. C. Huang, H. C. Wang, T. E. Hsieh, Y. C. Lin, E. Y. Chang,”High Performance Enhancement-mode Al2O3/AlGaN/GaN MIS-HEMT Using Standard Fluorine Ion Implantation and Partial-gate-recess,” Solid State Devices and Materials Conference (SSDM), Japan, September, 2016.
  • B. Do, Q. H. Luc, M. T. H. Ha, S. H. Huynh, C. C. Chang, J. W. Lin, K. S. Yang, C. C. F. Chang, Y. C. Lin, E. Y. Chang,” Equivalent Oxide Thickness Self-Reduction and Work Function Self-Alignment Using Ti/AlN Doping Layer for Mo/HfO2/InGaAs NMOS,” Solid State Devices and Materials Conference (SSDM), Japan, September, 2016.
  • B. Do, Q. H. Luc, M. T. H. Ha, S. H. Huynh, C. C. Chang, J. W. Lin, K. S. Yang, C. C. F. Chang, Y. C. Lin, E. Y. Chang,” Multilayer TiNi Alloys as Gate Metal for InGaAs MOS devices,” Solid State Devices and Materials Conference (SSDM), Japan, September, 2016.
  • H. Luc, C. C. Chang, P. C. Chang, H. B. Do, J. W. Lin, K. S. Yang, C. C. F. Chang, M. T. H. Ha, S. H. Huynh, Y. C. Lin, E. Y. Chang,” Effective Interface Passivation by In-Situ Remote-Plasma Gas Treatments for In0.53Ga0.47As MOSFET and FinFET Applications,” Solid State Devices and Materials Conference (SSDM), Japan, September, 2016.
  • C. Chang, Q. H. Luc, G. Y. Lin, C. C. Chang, J. W. Lin, C. C. F. Chang, K. S. Yang, Y. C. Lin, S. M. Sze, and E. Y. Chang,” InAs Quantum-Well MOSFET Performance Improvement by Using PEALD AlN Passivation Layer and In-Situ NH3 Post Remote-Plasma Treatment,” Solid State Devices and Materials Conference (SSDM), Japan, September, 2016.
  • T. Ho, Y. C. Chu and E. Y. Chang, “The effect of AlN buffer layer on the growth of MoS2 by pulsed laser deposition”, 16th International Conference on Atomic Layer Deposition, 24th-27th July 2016, Dublin, Ireland.
  • C. Chu, Y. T. Ho, and E. Y. Chang, “Preparation of Large-Area WSe2 Layers by Selenization of WO3 on SiO2 Substrate”, 16th International Conference on Atomic Layer Deposition, 24th-27th July 2016, Dublin, Ireland.
  • H. Wu, S. C. Liu , C. K. Huang , Y. C. Chiu , P. C. Han , P. C. Chang , F. Lumbantoruan , C. A. Lin , Y. K. Lin , C. Y. Chang , Chenming Hu , Hiroshi Iwai, and Edward Yi Chang, “High Vth Enhancement Mode GaN Power Devices with High ID,max Using Hybrid Ferroelectric Charge Trap Gate Stack”, 2017 Symposium on VLSI Technology Digest of Technical Papers, Kyoto, Japan, June 5-8 2017.
  • Jin-Ming Zhang , Ting-En Hsieh , Tian-Li Wu , Szu-Hao Chen , Shi-Xuan Chen , Po-Chien Chou , Edward Yi Chang, “Bias- and Temperature-Assisted Trapping/De-trapping of RON Degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate”, Physical and Failure Analysis of Integrated Circuits (IPFA), 2017, Chengdu, China, July 4-7 2017.
  • Yen-Teng Ho, Yung-Ching Chu, Lin-Lung We,Tien-Tung Luong , Chih-Chien Lin, Chun-Hung Chen, Hung-Ru Hsu, Yung-Yi Tu and Edward Yi Chang, “Wafer size MOS2 with few monolayer synthesized by H2S sulfurization”, Semiconductor Technology International Conference (CSTIC), Shanghai, China, Mar. 12-13 2017.
  • Tien Tung Luong, Franky Lumbantoruan, Yen-Yu Chen, Yen-Teng Ho, Yueh-Chin Lin, Shane Chang, Edward-Yi Chang, “Buffer-optimized improvement in RF loss of AlGaN/GaN HEMTs on 4-inch silicon (111)”, Semiconductor Technology International Conference (CSTIC), Shanghai, China, Mar. 12-13 2017.
  • Edward Yi Chang, Quang-Ho Luc, Huy-Binh Do, Yueh-Chin Lin, “Performance improvement of InGaAs FinFET using NH3 treatment”, 2017 IEEE 12th International Conference on ASIC (ASICON), Guiyang, China, Oct. 25-28 2017.
  • Edward Yi Chang, Chia-Hsun Wu, Yueh-Chin Lin, Ping-Cheng Han, Yu-Xiang Huang, Quang Ho Luc, Jian-You Chen, Yu-Hsuan Ho, “Comparison of E-mode GaN HEMT Using Different Gate Oxide Stack Approach”, International Conference on Applied Physics, System Science and Computers, Dubrovnik, Croatia, Sep. 27-29, 2017.
  • Kun Sheng Yang, Quang Ho Luc, Huy Binh Do, Minh Thien Huu Ha, Sa Hoang Huynh, Chia Chi Chang, Jia Wei Lin, Chien-Chou Fan Chang, Yueh Chin Lin, Edward Yi Chang, “Improved Performance and Sufficient Reliability In0.53Ga0.47As FinFET Using NH3 Plasma Treatment”, 2017 International Conference on Solid State Devices and Materials (2017 SSDM), Sendai, Japan, Sep. 19-22, 2017.
  • Jia Wei Lin, Quang-Ho Luc, Kun Sheng Yang, Chien-Chou Fan Chiang, Huy Binh Do, Minh Thien Huu Ha, Sa Hoang Huynh, Yu Da Jin, Tuan Anh Nguyen, Yueh-Chin Lin, Edward Yi Chang, “Low-Temperature Microwave Annealing Processes for In0.53Ga0.47As MOSFETs”, 2017 International Conference on Solid State Devices and Materials (2017 SSDM), Sendai, Japan, Sep. 19-22, 2017.
  • Quang-Ho Luc, Jia Wei Lin, Kun Sheng Yang, Chien-Chou Fan Chiang, Huy Binh Do, Minh Thien Huu Ha, Sa Hoang Huynh, Yu Da Jin, Tuan Anh Nguyen, Yueh-Chin Lin, Edward Yi Chang, “Enhancing the Performance of Ni-In0.53Ga0.47As MOSFETs Using Post Silicon Dopant Technology”, 2017 International Conference on Solid State Devices and Materials (2017 SSDM), Sendai, Japan, Sep. 19-22, 2017.
  • Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Tuan Anh Nguyen, Jia Wei Lin, Kun Sheng Yang, Chien-Chou Fan Chiang, Yu-Da Jin, Yueh Chin Lin, Edward Yi Chang, “Investigation of the Interface Stability of the Metal/HfO2/AlN/InGaAs MOS Devices”, 2017 International Conference on Solid State Devices and Materials (2017 SSDM), Sendai, Japan, Sep. 19-22, 2017.
  • Jing-Neng Yao, Yueh-Chin Lin, Heng-Tung Hsu, Ting-Jui Huang, Min-Song Lin, Ying-Chieh Wang, Zhi-Yi Huang, Simon M. Sze and Edward Yi Chang, “Enhanced-Mode InAs QWFETs with the Source Connected Field Plate Technique for Low Power Logic Applications”, 2017 International Conference on Solid State Devices and Materials (2017 SSDM), Sendai, Japan, Sep. 19-22, 2017.
  • Ying-Chieh Wang, Jing-Neng Yao, Yueh-Chin Lin, Heng-Tung Hsu, Ting-Jui Huang, Chi-Yi Huang, Edward Yi Chang, “Study of enhance mode π-gate InAs HEMT for logic application”, 2017 International Conference on Solid State Devices and Materials (2017 SSDM), Sendai, Japan, Sep. 19-22, 2017.
  • -S. Chiu, Y. Lin, Y. C. Lin, J. C. Huang, H. Iwai, K. Kakushima, E. Y. Chang, “RF Power Characteristics of the AlGaN/GaN HEMTs with Molecular Beam Deposition CeO2 as Gate Insulator”, 2017 International Conference on Solid State Devices and Materials (2017 SSDM), Sendai, Japan, Sep. 19-22, 2017.
  • H. Lee, C. C. Hsu, Y. C. Lin, J. N. Yao, C. Y. Wu, E. Y. Chang, “High Performance Tri-Gate AlGaN/GaN Power HEMTs”, 2017 International Conference on Solid State Devices and Materials (2017 SSDM), Sendai, Japan, Sep. 19-22, 2017.
  • Anandan, H. W. Yu, H. L. Ko, R. K. Kakkerla, V. Nagarajan, S. K. Singh, E. Y. Chang, “MOCVD Selective Growth of InAs Nanowires on Patterned Silicon Substrate by Optimizing Gas Flow Rate and Annealing Temperature”, 2017 International Conference on Solid State Devices and Materials (2017 SSDM), Sendai, Japan, Sep. 19-22, 2017.
  • K. Kakkerla, H. W. Yu, D. Anandan, C. J. Hsiao, S. K. Singh, E. Y. Chang, “Self-catalyst growth of InAs and InAs/GaSb Heterostructure Nanowires on Si substrate by MOCVD”, 2017 International Conference on Solid State Devices and Materials (2017 SSDM), Sendai, Japan, Sep. 19-22, 2017
  • H. Huynh, M. T. H. Ha, H. B. Do, T. A. Nguyen, Y. D. Jin, J. W. Lin, K. S. Yang, C. -C. F. Chang, Q. H. Luc, E. Y. Chang, “Materials growth and band offset parameters of the Al2O3/In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure”, 2017 International Conference on Solid State Devices and Materials (2017 SSDM), Sendai, Japan, Sep. 19-22, 2017.
  • Chih-Yi Yang, Tian-Li Wu, Tin-En Hsieh, Edward Yi Chang, “Investigation of degradation phenomena in GaN-on-Si power MIS-HEMTs under source current and drain bias stresses”, 2018 IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA, Mar. 11-15, 2018.
  • Yueh-Chin Lin, Jing-Neng Yao, Hisang-Hua Hsu, Ying-Chieh Wong, Chi-Yi Huang, Heng Tung Hsu, Hiroshi Iwai, Edward Yi Chang, “Study of the mesa etched tri-gate InAs HEMTs with extremely low SS for low-power logic applications”, 2018 China Semiconductor Technology International Conference (CSTIC), Shanghai, China, Mar. 11-12, 2018.
  • Yuan Lin, Yueh Chin Lin, Franky Lumbantoruan, Chang Fu Dec, Burhanuddin Yeop Majilis, Edward Yi Chang, “A Novel Digital Etch Technique for p-GaN Gate HEMT”, 2018 IEEE International Conference on Semiconductor Electronics (ICSE), Kuala Lumpur, Malaysia, Malaysia, Aug. 15-17 2018.
  • Edward Yi Chang, “High-performance E-mode GaN MIS-HEMT for Power Switching Applications”, 2018 IEEE International Conference on Semiconductor Electronics (ICSE), Kuala Lumpur, Malaysia, Malaysia, Aug. 15-17 2018.
  • H. Chen, T.T. Luong, V. Nagarajan, T.H. Chiang, E.Y. Chang, “Investigation on Parasitic Loss at the AlN/Si Interface for GaN-HEMTs Application”, 2018 International Conference on Solid State Devices and Materials (2018 SSDM), Tokyo, Japan, Sep. 9-13, 2018.
  • D. Jin, H.Q. Luc, W.J. Lin, S.K. Yang, Y.K. Zhang, B.H. Do, H.S. Huynh, H.M.T. Ha, P. Huang, W.C. Hsu, C.Y. Lin, E.Y. Chang, “Gate-All-Around In0.53Ga0.47As MOSFETs with Ion=3.3mA/µm (Vgs-Vth=Vds=1V) and gm=3.56 mS/µm (Vds=0.5V) using Plasma-Enhanced Atomic Layer Deposition Technique”, International Conference on Solid State Devices and Materials (2018 SSDM), Tokyo, Japan, Sep. 9-13, 2018.
  • Q. Luc, Y.K. Zhang, D.Y. Jin, H.S. Huynh, H.M.T. Ha, B.H. Do, P. Huang, W.C. Hsu, C.Y. Lin, E.Y. Chang, “InGaAs Negative Capacitance FETs Using HfZrOx: Impact of Annealing Conditions on the Ferroelectric and Steep Subthreshold Slope Characteristics”, International Conference on Solid State Devices and Materials (2018 SSDM), Tokyo, Japan, Sep. 9-13, 2018.
  • Anandan, H.L. Ko, R.K. Kakkerla, H.W. Yu, V. Nagarajan, S.K. Singh, E.Y. Chang, “Effect of V-III Molar Flow Ratios on InAs Nanowire Structure Formation at Crystal Quality”, International Conference on Solid State Devices and Materials (2018 SSDM), Tokyo, Japan, Sep. 9-13, 2018.
  • Y. Chen, K.M. Chen, Y.S.J. Shiao, C.J. Lin, G.W. Huang, H.C. Chen, F.K. Hsueh, C.H. Shen, J.M. Shieh, E.Y. Chang, “RF Characteristics of Trigate Poly-Si Thin-Film Transistors with Different Layout Geometries”, International Conference on Solid State Devices and Materials (2018 SSDM), Tokyo, Japan, Sep. 9-13, 2018.
  • H. Luc, C. C. Fan-Chiang, S. H. Huynh, P. Huang, H. B. Do, M. T. H. Ha, Y. D. Jin, T. A. Nguyen, K. Y. Zhang, H. C. Wang, Y. K. Lin, Y. C. Lin, C. Hu, H. Iwai, and E. Y. Chang, “First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack”, 2018 Symposia on VLSI Technology and Circuits, Honolulu, HI, June. 18-22, 2018.
  • Peng Lu, Yen Teng Ho, Yung-Ching Chu, Ming Zhang, Po-Yen Chien, Tien-Tung Luong, Edward Yi Chang, Jason CS Woo, “Electrical Properties of Compound 2D Semiconductor Mo1−xNbxS2”, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Qingdao, China, 31 Oct.-3 Nov. 2018.
  • Chun Wang, Heng-Tung Hsu, Ting-Jui Huang, Jun-Kai Fan, Edward Yi Chang, “Effect of AIN Spacer on the AIGaN/GaN HEMT Device Performance at Millimeter-Wave Frequencies”, 2018 Asia-Pacific Microwave Conference (APMC), Kyoto, Japan, Nov. 6-9, 2018.
  • Rajinikanth Yella, Krishna Pande, Ke Horng Chen, Edward Chang, “28 GHz Monolithic Transmitter on GaN chip for 5G application”, SPACOMM 2018 : The Tenth International Conference on Advances in Satellite and Space Communications, Athens, Greece, Apr. 22-26, 2018.
  • -C. Han, C.-Y. Yang, M.-W. Lee, J.-S. Wu, C.-H. Wu and Edward Yi Chang, “High Performance Normally-Off AlGaN/GaN MIS-HEMT Using Charge Storage Technique”, 2019 Compound Semiconductor Week (CSW), Nara, Japan, May 19-23, 2019.
  • Edward Yi Chang, Ho Quang Luc, Chin Yueh Lin, “High-Performance In0. 53Ga0. 47 As FinFETs for logic and RF Applications”, 2019 Compound Semiconductor Week (CSW), Nara, Japan, May 19-23, 2019.
  • Ping-Cheng Han, Chia-Hsun Wu, Yu-Hsuan Ho, Zong-Zheng Yan, Edward Yi Chang, “Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure”, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, May 19-23, 2019.
  • Sankalp Kumar Singh, Ankur Gupta, Deepak Anandan, Ramesh Kumar Kakkerla, Venkatesan Nagarajan, Hung Wei Yu, A. Mohan Babu, N. Mohan Kumar, Edward Yi Chang, “Noise Analysis in InAs/GaSb Heterostructure Tunnel Field Effect Transistor”, 5th International Conference on Nanoscience and Nanotechnology (ICONN), Tamil Nadu, India, Jan. 28-30, 2019.
  • Sankalp Kumar Singh, Ankur Gupta, Venkatesan Nagarajan, Deepak Anandan, Ramesh Kumar Kakkerla, Hung Wei Yu, Edward Yi Chang, “A novel p-channel GaSb based TFET with Pocket implant”, 5th International Conference on Nanoscience and Nanotechnology (ICONN), Tamil Nadu, India, Jan. 28-30, 2019.
  • Edward Yi Chang, Yen-Ku Lin, “Ohmic Contacts with low contact resistance for GaN HEMTs”, 2019 19th International Workshop on Junction Technology (IWJT), Kyoto, Japan, June 6-7, 2019.
  • C. Lin, M. W. Lee, M. Y. Tsai, C. Wang, J. N. Yao, T. J. Huang, H. T. Hsu, J. S. Maa, and Edward Y. Chang, “Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs”, 2019 14th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, Sept. 30 – Oct. 1, 2019.
  • Edward Yi Chang, Quang-Ho Luc, Nhan-Ai Tran, Yueh-Chin Lin, “Negative Capacitance III-V FinFETs for Ultra-Low-Power Applications”, 236th ECS Meeting, Atlanta, GA, Oct. 13-17, 2019.
  • Pragyey Kumar Kaushik, Sankalp Kumar Singh, Ankur Gupta, Ananjan Basu, Edward Yi Chang, “Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT”, 2020 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, USA, June 13-14, 2020.
  • Surya Elangovan, Chun-Han Huang, Ching-An Chen, Stone Chcng, Edward Yi Chang, “Bias Temperature Instability of GaN Cascode Power Switch”, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore, July 20-23, 2020.
  • Che Wei Hsu, Quang Ho Luc, Hua Lun Ko, Ping Huang, Jing Yuan Wu, Nhan Ai Tran, Edward Yi Chang, “Ultra Low Power Consumption Tunnel Diode based on InAs/GaSb Core-Shell Nanowires,” The 2nd International Symposium on Engineering and Technology (ISET 2020), Nantou County, Taiwan, Nov.14-16, 2020.
  • Ping Huang, Quang Ho Luc, Edward Yi Chang, “First Demonstration of Plasma-Assisted Roughness Improvement on Oxide Top Surface in InGaAs MOSFET”, The 2nd International Symposium on Engineering and Technology (ISET 2020), Nantou County, Taiwan, Nov.14-16, 2020.
  • Ping Huang, Quang Ho Luc, Hua Lun Ko, Jing Yuan Wu, Che Wei Hsu, Nhan Ai Tran, and Edward Yi Chang, “First Demonstration of Remote-Plasma Induced Surface Termination and Native Oxide Removal on In0.53Ga0.47As Using NH3/N2 Gas Mixture”, International Electron Devices & Materials Symposium (IEDMs 2020), Taoyuan City, Taiwan, Oct.15-16, 2020.
  • Hua Lun Ko, Quang Ho Luc, Ping Huang, Jing Yuan Wu, Che Wei Hsu, Si-Meng Chen, Nhan Ai Tran, and Edward Yi Chang, “Nitrogen-Passivated InGaAs Gate-All-Around MOSFETs with Lowest Off-Current”, International Electron Devices & Materials Symposium (IEDMs 2020), Taoyuan City, Taiwan, Oct.15-16, 2020.
  • Hua Lun Ko, Quang Ho Luc, Si-Meng Chen, Che Wei Hsu, Edward Yi Chang, “Dramatically Performance Improvement of InGaAs Gate All Around MOSFETs Using Nitrogen Passivated”, The 2nd International Symposium on Engineering and Technology (ISET 2020), Taoyuan City, Taiwan, Nov.14-16, 2020.
  • Deepak Anandan, Edward Yi Chang, Hung Wei Yu, Venkatesan Nagarajan, Sankalp Kumar Singh, “Effect of Total Molar Flow Rate on Crystal Structure of Selective Area Epitaxy-InAs NW”, ICONN-2021, SRM University, Chennai, India, February 01-03, 2021.
  • Deepak Anandan, Edward Yi Chang, Hung Wei Yu, Venkatesan Nagarajan, Sankalp Kumar Singh, “Selective Area Epitaxy of InGaAs/InAs Heterostructure on Si (111) Substrate by MOCVD”, ICONN-2021, SRM University, Chennai, India, February 01-03, 2021.
  • Deepak Anandan, Edward Yi Chang, Hung Wei Yu, Hua Lun Ko, Venkatesan Nagarajan, Sankalp Kumar Singh, “Selective Area Epitaxy of Axial Wurtzite-InAs Nanowire on InGaAs NW by MOCVD”, 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr.19-22, 2021.
  • Hua-Lun Ko, Quang Ho Luc, and Edward Yi Chang, “High peak Gm of In0.53Ga0.47As FinFETs with N2 Surface Passivation”, International Conference on Materials, Surface Science and Technology (ICMSST), Berlin, Germany, May 20-21, 2021.
  • Deepak Anandan, Che Wei Hsu, and Edward Yi Chang, “Growth of III-V Antimonide Heterostructure Nanowires on Silicon Substrate for Esaki Tunnel Diode”, NANOSYM 2021, Malaysia, October 11-13, 2021.
  • Hua-Lun Ko, Quang Ho Luc, Si-Meng Chen, Ping Huang, Jing-Yuan Wu, Che-Wei Hsu, Nhan-Ai Tran, and Edward Yi Chang, “In0.53Ga0.47As Gate-All-Around Nanosheet MOSFETs with Aggressively Improved in Short Channel Effects”, NANOSYM 2021, Malaysia, October 11-13, 2021.
  • Yan-Kui Liang, Jing-Wei Lin, Jui-Sheng Wu, Chun-Jung Su, Edward Yi Chang, Chun-Hsiung Lin, “Effect of Annealing Temperature on Ferroelectric Properties of ALD Deposited TiN/Hzo/TiN Capacitor”, 240th ECS Meeting, Digital Meeting, Oct. 10-14, 2021.
  • Ping-Hsun Lee, Ming-Wen Lee, Yuen-Chin Lin, Heng-Tung Hsu, Pin Su, and Edward Yi Chang, “Low Noise AlGaN/GaN HEMTs with Г-Shaped Gate Structure for Ka-Band Application”, IEDMS 2021, Tainan, Taiwan, Nov. 18-19, 2021.
  • Shivendra K Rathaur, Tsung-Ying Yang, Chih-Yi Yang, Edward Yi Chang, Heng-Tung Hsu, Abhisek Dixit, “Time-dependent Multiple Gate Voltage Reliability of Hybrid Ferroelectric Charge Trap Gate Stack (FEG) GaN HEMT for Power Device Applications”, 2022 IEEE Latin American Electron Devices Conference (LAEDC), Cancun, Mexico, July 04-06, 2022.
  • Surya Elangovan, Stone Cheng, Jia-Hao Yao, Edward Yi Chang, “VTH & Gm, max Instability Analysis of the Multiple GaN Chips based Cascode Power Module”, 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore, July 18-21, 2022.
  • Cheng-Wei Chuang, Yueh-Chin Lin, Neng-Da Li, and Edward Yi Chang, “The Influence of Patterned Ohmic Recess Morphology on Gate Controllability with Low Contact Resistance AlGaN/GaN HEMTs”, International Electron Devices & Materials Symposium 2022, Nantou, Taiwan, October 27-28, 2022.
  • Yueh-Chin Lin, Pin Su, and Edward Yi Chang, “Γ-gate AlGaN/GaN HEMT on SiC Substrate with 8.3W/mm Power Density at 38GHz”, International Electron Devices & Materials Symposium 2022, Nantou, Taiwan, October 27-28, 2022.
  • -S. Wu, P.-H. Liao, S.-J. Chang, T.-Y. Yang, C.-Y. Teng, Y.-K. Liang, D. Panda, Q. H. Luc, and E. Y. Chang, “Superior Breakdown, Retention, and TDDB Lifetime for Ferroelectric Engineered Charge Trap Gate E-mode GaN MIS-HEMT”, 68th Annual IEEE International Electron Devices Meeting (IEEE IEDM 2022), San Francisco, USA December 3-7, 2022